One-step method for on-line lithographic pattern inspection

Details One-step method for on-line lithographic pattern inspection One-step method for on-line lithographic pattern inspection

1997-01-13

1998-03-31

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 30, G03F 900

Patent

active

057336911

ABSTRACT:
A mask is provided, for positive resists, that includes an opaque area and a partially transparent area, there being a straight line boundary between the two. The feature to be photocleaved is a clear area located midway between these areas so that it is bisected by the boundary. For negative resists, the mask includes a clear area and a partially transparent area, the feature to be photocleaved now being an opaque area. The photoresist (positive or negative) is first given a normal dose of actinic radiation, directed through the mask and is developed. After development has been performed, a photocleaved structure results.

REFERENCES:
patent: 4788117 (1988-11-01), Cuthbert et al.
patent: 5593815 (1997-01-01), Ahn

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