One stack with steam oxide for charge retention

Details One stack with steam oxide for charge retention One stack with steam oxide for charge retention

2006-07-04

2006-07-04

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S636000, C257S640000, C257S645000, C257S649000, C438S763000, C438S770000, C438S773000, C438S787000

Reexamination Certificate

active

07071538

ABSTRACT:
A semiconductor device includes a substrate that further includes source, drain and channel regions. The device may further include a bottom oxide layer formed upon the substrate, a charge storage layer formed upon the bottom oxide layer, and a steam oxide layer thermally grown upon the charge storage layer. The device may also include an alumina oxide layer formed upon the steam oxide layer and a gate electrode formed upon the alumina oxide layer.

REFERENCES:
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patent: 6130129 (2000-10-01), Chen
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patent: 2004/0232471 (2004-11-01), Shukuri
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patent: 2005/0142765 (2005-06-01), Joo
patent: 2005/0227437 (2005-10-01), Dong et al.
patent: 2006/0017092 (2006-01-01), Dong et al.

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