One-device non-volatile random access memory cell

Details One-device non-volatile random access memory cell One-device non-volatile random access memory cell

2006-06-27

2009-02-03

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S197000, C438S257000, C438S264000, C438S581000, C438S583000, C257S314000, C257S315000, C257S316000, C257S317000

Reexamination Certificate

active

07485513

ABSTRACT:
One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in the body region. A channel region is formed in the body region between the first diffusion region and the second diffusion region. The memory cell includes a gate insulator stack formed above the channel region, and a gate to connect to a word line. The gate insulator stack includes a floating plate to selectively hold a charge. The floating plate is connected to the second diffusion region. The memory cell includes a diode that connects the body region to the second diffusion region such that the floating plate is charged when the diode is reversed biased. Other aspects are provided herein.

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