Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2006-01-03
2006-01-03
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C134S022100, C134S001100, C134S034000, C134S037000, C134S902000, C216S063000, C216S067000, C216S069000, C438S905000, C205S411000
Reexamination Certificate
active
06981508
ABSTRACT:
Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.
REFERENCES:
patent: 2879212 (1959-03-01), Hill et al.
patent: 3146179 (1964-08-01), Davies
patent: 3684667 (1972-08-01), Sayce
patent: 3976447 (1976-08-01), Merchant et al.
patent: 4125443 (1978-11-01), Grant et al.
patent: 4176018 (1979-11-01), Faron et al.
patent: 4312718 (1982-01-01), Watanabe et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4818326 (1989-04-01), Liu et al.
patent: 4900395 (1990-02-01), Syverson et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5002632 (1991-03-01), Loewenstein et al.
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5180466 (1993-01-01), Shin
patent: 5207836 (1993-05-01), Chang
patent: 5284605 (1994-02-01), Nicolas
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5336832 (1994-08-01), Keller
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5378324 (1995-01-01), Hodgson
patent: 5405491 (1995-04-01), Shahvandi et al.
patent: 5406008 (1995-04-01), Sievert
patent: 5425842 (1995-06-01), Zijlstra
patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5534107 (1996-07-01), Gray et al.
patent: 5549802 (1996-08-01), Guo
patent: 5565038 (1996-10-01), Ashley
patent: 5569151 (1996-10-01), Karwacki et al.
patent: 5597495 (1997-01-01), Keil et al.
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5628894 (1997-05-01), Tarancon
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5685916 (1997-11-01), Ye et al.
patent: 5688384 (1997-11-01), Hodgeson et al.
patent: 5693147 (1997-12-01), Ward et al.
patent: 5705080 (1998-01-01), Leung et al.
patent: 5756400 (1998-05-01), Ye et al.
patent: 5762813 (1998-06-01), Takiyama et al.
patent: 5779886 (1998-07-01), Tarancon
patent: 5788776 (1998-08-01), Shang et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5824607 (1998-10-01), Trow et al.
patent: 5844195 (1998-12-01), Fairbairn et al.
patent: 5846886 (1998-12-01), Hattori et al.
patent: 5849092 (1998-12-01), Xi et al.
patent: 5849639 (1998-12-01), Molloy et al.
patent: 5872061 (1999-02-01), Lee et al.
patent: 5880031 (1999-03-01), Wong
patent: 5880032 (1999-03-01), Doi et al.
patent: 5888309 (1999-03-01), Yu
patent: 5904566 (1999-05-01), Tao et al.
patent: 5935874 (1999-08-01), Kennard
patent: 5958801 (1999-09-01), Langley
patent: 5970376 (1999-10-01), Chen
patent: 5980769 (1999-11-01), Yanagisawa et al.
patent: 6007733 (1999-12-01), Jang et al.
patent: 6014979 (2000-01-01), Van Autryve et al.
patent: 6020035 (2000-02-01), Gupta et al.
patent: 6024887 (2000-02-01), Kuo et al.
patent: 6024888 (2000-02-01), Watanabe et al.
patent: 6029718 (2000-02-01), Jackson et al.
patent: 6051505 (2000-04-01), Chu et al.
patent: 6109206 (2000-08-01), Maydan et al.
patent: 6117793 (2000-09-01), Tang
patent: 6125859 (2000-10-01), Kao et al.
patent: 6159333 (2000-12-01), Gupta et al.
patent: 6209483 (2001-04-01), Dyer
patent: 6255222 (2001-07-01), Herchen et al.
patent: 6264852 (2001-07-01), Herchen et al.
patent: 6271148 (2001-08-01), Kao et al.
patent: 6286451 (2001-09-01), Ishikawa et al.
patent: 6352081 (2002-03-01), Lu et al.
patent: 6362031 (2002-03-01), Yamaguchi et al.
patent: 6366346 (2002-04-01), Nowak et al.
patent: 6366366 (2002-04-01), Nakamura
patent: 6374831 (2002-04-01), Chandran et al.
patent: 6379575 (2002-04-01), Yin et al.
patent: 6383257 (2002-05-01), McDermott et al.
patent: 6387288 (2002-05-01), Bjorkman et al.
patent: 6500356 (2002-12-01), Goto et al.
patent: 6544345 (2003-04-01), Mayer et al.
patent: 6602433 (2003-08-01), Bhardwaj et al.
patent: 2002/0074013 (2002-06-01), Yadav et al.
patent: 2003/0010354 (2003-01-01), Goto et al.
patent: 2003/0098038 (2003-05-01), Siegele et al.
patent: 2003/0109144 (2003-06-01), Goto et al.
patent: 2003/0121796 (2003-07-01), Siegele et al.
patent: 2003/0192569 (2003-10-01), Goto et al.
patent: 429809 (1926-06-01), None
patent: 0 697 467 (1996-02-01), None
patent: 0 819 780 (1998-01-01), None
patent: 0 965 661 (1999-12-01), None
patent: 1 076 355 (2001-02-01), None
patent: 3077786 (1991-04-01), None
patent: 04311570 (1992-11-01), None
patent: 5109673 (1993-04-01), None
patent: 6033054 (1994-02-01), None
patent: 6080962 (1994-03-01), None
patent: 08017804 (1996-01-01), None
patent: 8060368 (1996-03-01), None
patent: WO 99/02754 (1999-01-01), None
patent: WO 99/06611 (1999-02-01), None
patent: WO 99/28538 (1999-06-01), None
patent: WO 00/51938 (2000-09-01), None
patent: WO 00/52740 (2000-09-01), None
“Seventh Generation PECVD System Announced Overcoming Obstacles to Increase the Substrate Size”AKT News Excerpt; Electronic Journal, Nov., 2003.
Foon, R. “Kinetics of Gaseous Fluoride Reactions”Prog. Reaction Kinetics, 1975, vol. 8, No. 2, pp. 81-160 Pergamon Press, Printed in Great Britain.
Wang, X., et al., “Gas Phase Silicon Etching with Bromine Trifluoride,”Transducers, 1997, Conference on Solid-State Sensors and Actuators.
International Sematech, “Motorola Evaluation of the Applied Science and Technology, Inc. (ASTeX) Astron Technology for Perfluorocompound (PFC) Emissions Reductions on the Applied Materials DxL Chemical Vapor Deposition (CVD) Chamber”, Apr. 16, 1999.
Astron “Reactive Gas Generators,”MKS Instruments, Inc., 2003.
Flamm, et al. “Reaction of Fluorine Atoms with SiO2,”J. Appl. Phys., Oct. 1979 50(10), 6211-13.
Mucha et al., “Chemiluminescent Reaction of SiF2 with Fluorine and the Etching of Silicon by Atomic and Molecular Fluorine,”J. Appl. Phys. 53(6) 4553-54.
Donnelly, et al. Studies of chemiluminescence accompanying fluorine atom etching of silicon: J. Appl. Phys., 51 (190) (Oct. 1980) 5273-76.
Flamm, et al. “The reaction of fluorine atoms with silicon,”J. Appl. Phys. 52 (5) (May 1981) 3633-39.
Flamm, et al., “XeF2and F-atom reactions with Si; their significance for plasma etching,”Solid State Technology (Apr. 1993) 117-21.
Ibbotson, D.E., et al., “Comparison of XeF2 and F-Atom Reactions with Si and SiO2,”Mar. 28, 1984.
Aliev, V.S., et al., “Development of Si (100) Surface Roughness at the Initial Stage of Etching in F2 and XeF2 Gases; Ellipsometric Study,”Surface Science, 206-14 (1999).
Habuka, H., et al., “Dominant overall chemical reaction in a chlorine trifluoride-silicon-nitrogen system at atmospheric pressure,”Jpn. J. Appl. Phys., (1999) 38 6466-69.
Larson, P.R., et al., “Atomic Fluorine Beam Etching of Silicon and Related Materials,”J. Vac. Sci. Tech. B (1999).
Harshbarger William R.
Law Kam S.
Shang Quanyuan
Yadav Sanjay
Kornakov M.
Patterson & Sheridan LLP
LandOfFree
On-site cleaning gas generation for process chamber cleaning does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with On-site cleaning gas generation for process chamber cleaning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and On-site cleaning gas generation for process chamber cleaning will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3549827