Distillation: processes – separatory – Distilling to separate or remove only water – From nitric acid
Patent
1996-07-01
1998-12-08
Bhat, Nina
Distillation: processes, separatory
Distilling to separate or remove only water
From nitric acid
203 40, 423484, 423488, 202158, 202161, 202172, 202200, C01B 2144, B01D 300
Patent
active
058463860
ABSTRACT:
Highly purified ammonia for use in semiconductor manufacturing is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.
REFERENCES:
patent: 4828660 (1989-05-01), Clark et al.
patent: 4929435 (1990-05-01), Boghean et al.
patent: 4952386 (1990-08-01), Davidson et al.
patent: 4980032 (1990-12-01), Dobson
patent: 5164049 (1992-11-01), Clark et al.
patent: 5242468 (1993-09-01), Clark et al.
patent: 5288333 (1994-02-01), Tanaka et al.
patent: 5346557 (1994-09-01), Ito et al.
patent: 5496778 (1996-03-01), Hoffman et al.
patent: 5500098 (1996-03-01), Brown et al.
Clark R. Scott
Hoffman Joe G.
Bhat Nina
Startec Ventures, Inc.
Wendt Jeffrey L.
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