Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-08-01
2006-08-01
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S230080, C365S233100, C365S194000
Reexamination Certificate
active
07085176
ABSTRACT:
It has been discovered that initialization of a memory array can be improved by setting the nodes of the memory array to a predetermined value automatically upon applying power to the integrated circuit. Data input nodes and a memory write enable node are configured to store the predetermined values on the nodes of the memory array in response to successive enablement of word lines corresponding to the nodes of the memory array and automatic reset of the word lines. Circuitry included for initializing control and data signals of the memory array are effectively disabled upon termination of the initialization. Inclusion of circuitry that initiates and terminates the initialization obviates an additional input/output pin for this purpose.
REFERENCES:
patent: 6011746 (2000-01-01), Oh
Eleyan Nadeem N.
Kim Hong S.
Levy Howard L.
Tomsio Nayon
Lam David
Sun Microsystems Inc.
Zagorin O'Brien Graham LLP
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