Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-05-09
1998-10-13
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C30B 1522
Patent
active
058206728
ABSTRACT:
A method for controlling oxygen-induced stacking faults (OISF) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique includes the steps of forming a flared top portion (18) of the silicon crystal (12) to a predetermined diameter (20) and tapering (23) the silicon crystal (12) top portion (18) to produce a cylindrical portion (22) having a second predetermined diameter. The second predetermined diameter is smaller than the first predetermined diameter. Because of the inward taper (23) OISF concentrates in the flared top portion (18) of silicon crystal (12).
REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4417943 (1983-11-01), Jacques et al.
Bell Weldon J.
Grimes H. Michael
Brady III W. James
Breneman R. Bruce
Donaldson Richard L.
Garrett Felisa
Holland Robby T.
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