Ohmics contacts of germanium and palladium alloy from group III-

Details Ohmics contacts of germanium and palladium alloy from group III- Ohmics contacts of germanium and palladium alloy from group III-

1976-05-27

1977-03-08

James, Andrew J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 65, 357 71, 29589, 427 82, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

040115836

ABSTRACT:
A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.

REFERENCES:
patent: 3186084 (1965-06-01), Betteridge
patent: 3386867 (1968-06-01), Staples
patent: 3532562 (1970-10-01), Clawson et al.
patent: 3711745 (1973-01-01), Moroney
patent: 3889286 (1975-06-01), Debesis

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