Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-02-28
2008-12-02
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S763000, C257S764000, C257S770000, C257SE23041
Reexamination Certificate
active
07459788
ABSTRACT:
An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.
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Ando Yuji
Hataya Koji
Inoue Takashi
Kuzuhara Masaaki
Miyamoto Hironobu
NEC Corporation
Ngo Ngan
Young & Thompson
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