Ohmic electrode structure for In.sub.x Ga.sub.1-x As layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257764, 257767, 257744, H01L 2348, H01L 2352, H01L 2940

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active

060376635

ABSTRACT:
An ohmic electrode structure is produced by developing an In.sub.x Ga.sub.1-x As layer epitaxially on a compound semiconductor (n-Ga As), and providing a barrier layer composed of a tungsten nitride (high melting point metallic nitride) by sputtering. Then, electrode patterning is performed on the top of the tungsten nitride barrier layer by the photo-resist technique. After the process, unnecessary portion of the tungsten nitride barrier layer is removed by the reactive ion etching (RIE). On the top of this a Ti layer, a Pt layer and an Au layer are deposited in layers in that order by the lift-off technique to form a metal layer. Here, molybdenum nitride or titanium nitride may be used in place of tungsten nitride.

REFERENCES:
Barrier Layers: Principles and Applications in Microelectronics--Marc Wittmer--J. Vac Sci Technol. A 2(2) Apr. -Jun. 1984 pp. 273-280.
Ishii, K., et al., "High-Temperature Stable W.sub.5 Si.sub.3 /In.sub.0.53 Ga.sub.0.47 As Ohmic Contacts to GaAs for Self-Aligned HBTS" IEDM (1986) pp. 274-277.

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