Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-08
2000-03-07
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438604, 438606, 438605, H01L 21441
Patent
active
060339764
ABSTRACT:
It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing precipitates composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.
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Murakami Masanori
Oku Takeo
Otsuki Akira
Everhart Caridad
Sony Corporation
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