Ohmic contacts for high electron mobility transistors and a...

Details Ohmic contacts for high electron mobility transistors and a... Ohmic contacts for high electron mobility transistors and a...

2005-02-08

2005-02-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S571000, C438S572000, C438S663000, C438S763000, C438S975000, C438S978000, C257S155000, C257S194000, C257S260000, C257S267000, C257S453000, C257S473000

Reexamination Certificate

active

06852615

ABSTRACT:
A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.

REFERENCES:
patent: 5196358 (1993-03-01), Boos
patent: 6248666 (2001-06-01), Frijlink et al.
patent: 6395588 (2002-05-01), Igarashi et al.
patent: 6525346 (2003-02-01), Mizutani
patent: 20010042860 (2001-11-01), Hata et al.

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