Ohmic contacts for group III-V n-type semiconductors

Details Ohmic contacts for group III-V n-type semiconductors Ohmic contacts for group III-V n-type semiconductors

1974-09-03

1976-06-22

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

427383, B05B 512

Patent

active

039652793

ABSTRACT:
A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.

REFERENCES:
patent: 3231421 (1966-01-01), Schmidt
patent: 3239376 (1966-03-01), Schmidt
patent: 3468659 (1969-09-01), Belasco et al.
patent: 3518749 (1970-07-01), Norton
patent: 3523222 (1970-08-01), Jaeger et al.
patent: 3567508 (1971-03-01), Cox et al.
patent: 3684930 (1972-08-01), Collins et a.
patent: 3686539 (1972-08-01), Schwartzman
patent: 3686539 (1972-08-01), Schwartzman
patent: 3728785 (1973-04-01), Schmidt
patent: 3890699 (1975-06-01), Vilms

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