Ohmic contacts and interconnects to silicon and method of making

Details Ohmic contacts and interconnects to silicon and method of making Ohmic contacts and interconnects to silicon and method of making

1984-04-02

1989-10-03

Swisher, Nancy A. B.

Stock material or miscellaneous articles

Composite

Of silicon containing

428620, 428630, 428665, 428663, 357 71, B32B 516, H01L 300, H01L 500

Patent

active

048716170

ABSTRACT:
A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon of low resistivity to form a low resistance contact therewith.

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patent: 3519479 (1970-07-01), Inoue et al.
patent: 3657611 (1972-04-01), Yoneda
patent: 3754168 (1973-08-01), Cunningham et al.
patent: 3833842 (1974-09-01), Cunningham et al.
P. B. Ghate et al., Application of Ti:W Barrier Metallization for Integrated Circuits, Thin Solid Films, vol. 53 (1978), pp. 117-128.
S. E. Babcock et al., Titanium Tungsten Contacts to Silicon, J. Appl. Phys., vol. 53, No. 10, Oct. 1982, pp. 6898-6905.
J. Gniewek et al., Three Barrier Height SBD Device, IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977, pp. 1001-1002.

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