Ohmic contact structure of a highly integrated semiconductor dev

Details Ohmic contact structure of a highly integrated semiconductor dev Ohmic contact structure of a highly integrated semiconductor dev

1994-03-02

1996-10-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257743, 257751, H01L 2334

Patent

active

055634486

ABSTRACT:
An ohmic contact structure for connection of a metal electrode to a highly integrated semiconductor device and a method for making the same. A contact hole is selectively formed in an insulating layer. A contact structure of a hetero-junction of Ge and Si.sub.1-x Ge.sub.x whose bandgap is lower than that of the underlying substrate material is formed between the interface of the metal electrode and the semiconductor substrate. The hetero-junction structure minimizes stress and strain between the metal electrode and the semiconductor substrate. The ohmic contact structure lowers the resistance of electronic lines and increases the reliability of integrated semiconductor devices.

REFERENCES:
patent: 4738937 (1988-04-01), Parsons
patent: 5108954 (1992-04-01), Sandhu et al.
patent: 5126805 (1992-06-01), Bulat et al.
patent: 5242847 (1993-09-01), Ozturk et al.

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