Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-02
1996-10-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257743, 257751, H01L 2334
Patent
active
055634486
ABSTRACT:
An ohmic contact structure for connection of a metal electrode to a highly integrated semiconductor device and a method for making the same. A contact hole is selectively formed in an insulating layer. A contact structure of a hetero-junction of Ge and Si.sub.1-x Ge.sub.x whose bandgap is lower than that of the underlying substrate material is formed between the interface of the metal electrode and the semiconductor substrate. The hetero-junction structure minimizes stress and strain between the metal electrode and the semiconductor substrate. The ohmic contact structure lowers the resistance of electronic lines and increases the reliability of integrated semiconductor devices.
REFERENCES:
patent: 4738937 (1988-04-01), Parsons
patent: 5108954 (1992-04-01), Sandhu et al.
patent: 5126805 (1992-06-01), Bulat et al.
patent: 5242847 (1993-09-01), Ozturk et al.
Lee Sang-in
Park Soon-oh
Mintel William
Potter Roy
Samsung Electronics Co,. Ltd.
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