Offset dual gate thin film field effect transistor

Details Offset dual gate thin film field effect transistor Offset dual gate thin film field effect transistor

1993-07-22

1994-05-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257318, 257319, 257 57, H01L 2976, H01L 29788, H01L 2904

Patent

active

053171780

ABSTRACT:
A field effect transistor having a thin polycrystalline silicon layer as a channel region, a lower gate electrode beneath the silicon layer, and upper gate electrode with an offset above the silicon layer, and a gate dielectric layer between the lower gate electrode and the silicon layer, and a gate dielectric layer between the upper gate electrode and the silicon layer.

REFERENCES:
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4980732 (1990-12-01), Okazawa

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