Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-09-17
2009-11-10
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S189110
Reexamination Certificate
active
07616474
ABSTRACT:
An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.
REFERENCES:
patent: 5389778 (1995-02-01), Shinomiya
patent: 6166944 (2000-12-01), Ogino
patent: 6256224 (2001-07-01), Perner et al.
patent: 6262625 (2001-07-01), Perner et al.
patent: 6388917 (2002-05-01), Hoffman et al.
patent: 6396733 (2002-05-01), Lu et al.
patent: 6462600 (2002-10-01), Pakriswamy
patent: 6650562 (2003-11-01), Holden et al.
Dickstein & Shapiro LLP
Hoang Huan
Micro)n Technology, Inc.
LandOfFree
Offset compensated sensing for magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Offset compensated sensing for magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Offset compensated sensing for magnetic random access memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4111941