Offset compensated sensing for magnetic random access memory

Details Offset compensated sensing for magnetic random access memory Offset compensated sensing for magnetic random access memory

2007-10-23

2007-10-23

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S210130, C365S158000, C365S203000

Reexamination Certificate

active

11377683

ABSTRACT:
An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.

REFERENCES:
patent: 5389778 (1995-02-01), Shinomiya
patent: 6166944 (2000-12-01), Ogino
patent: 6262625 (2001-07-01), Perner et al.
patent: 6388917 (2002-05-01), Hoffmann et al.
patent: 6396733 (2002-05-01), Lu et al.
patent: 6462600 (2002-10-01), Pakriswamy
patent: 6650562 (2003-11-01), Holden et al.

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