OFET structures with both n- and p-type channels

Details OFET structures with both n- and p-type channels OFET structures with both n- and p-type channels

2006-01-12

2008-12-30

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S099000, C257SE21179

Reexamination Certificate

active

07470574

ABSTRACT:
The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.

REFERENCES:
patent: 4021835 (1977-05-01), Etoh et al.
patent: 5118632 (1992-06-01), Schrantz
patent: 6278127 (2001-08-01), Dodabalapur et al.
patent: 7145174 (2006-12-01), Chiang et al.
patent: 2005/0056828 (2005-03-01), Wada et al.
J.S. Meth, et al.; “Dual Insulated-Gate Field-Effect Transistors With Cadmium Sulfide Active Layer and a Laminated Polymer Dielectric”; 2004 American Institute of Physics; Applied Physics Letters, vol. 84, No. 15; pp. 1-3.

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