Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-27
2007-02-27
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330
Reexamination Certificate
active
10701139
ABSTRACT:
A nitride read only memory (NROM) cell has a nitride layer that is not located under the center of the transistor. The gate insulator layer, with the nitride layer, is comprised of two sections that each have structurally defined and separated charge trapping regions. A charge is stored on a particular trapping region in response to the direction that the transistor is operated. The two sections of the gate insulator separate outer regions of the polysilicon gate structure from the middle region.
REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4420504 (1983-12-01), Cooper
patent: 4485390 (1984-11-01), Jones et al.
patent: 4755864 (1988-07-01), Ariizumi
patent: 4881114 (1989-11-01), Mohsen
patent: 5005072 (1991-04-01), Gonzalez
patent: 5241496 (1993-08-01), Lowrey
patent: 5330930 (1994-07-01), Chi
patent: 5378647 (1995-01-01), Hong
patent: 5379253 (1995-01-01), Bergemont
patent: 5397725 (1995-03-01), Wolstenholme
patent: 5467305 (1995-11-01), Bertin
patent: 5576236 (1996-11-01), Chang
patent: 5768192 (1998-06-01), Eitan
patent: 5792697 (1998-08-01), Wen
patent: 5858841 (1999-01-01), Hsu
patent: 5911106 (1999-06-01), Tasaka
patent: 5946558 (1999-08-01), Hsu
patent: 5960285 (1999-09-01), Hong
patent: 5966603 (1999-10-01), Eitan
patent: 5994745 (1999-11-01), Hong
patent: 6011725 (2000-01-01), Eitan
patent: 6028342 (2000-02-01), Chang
patent: 6030871 (2000-02-01), Eitan
patent: 6044022 (2000-03-01), Nachumovsky
patent: 6081456 (2000-06-01), Dadashev
patent: 6087220 (2000-07-01), Rogers et al.
patent: 6108240 (2000-08-01), Lavi et al.
patent: 6133102 (2000-10-01), Wu
patent: 6134156 (2000-10-01), Eitan
patent: 6147904 (2000-11-01), Liron
patent: 6157570 (2000-12-01), Nachumovsky
patent: 6172396 (2001-01-01), Chang
patent: 6174758 (2001-01-01), Nachumovsky
patent: 6175523 (2001-01-01), Yang
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6184089 (2001-02-01), Chang
patent: 6201282 (2001-03-01), Eitan
patent: 6201737 (2001-03-01), Hollmer
patent: 6204529 (2001-03-01), Lung
patent: 6207504 (2001-03-01), Hsieh
patent: 6208557 (2001-03-01), Bergemont
patent: 6215702 (2001-04-01), Derhacobian
patent: 6218695 (2001-04-01), Nachumovsky
patent: 6222768 (2001-04-01), Hollmer
patent: 6240020 (2001-05-01), Yang
patent: 6243300 (2001-06-01), Sunkavalli
patent: 6251731 (2001-06-01), Wu
patent: 6255166 (2001-07-01), Ogura
patent: 6256231 (2001-07-01), Lavi
patent: 6266281 (2001-07-01), Derhacobian
patent: 6269023 (2001-07-01), Derhacobian
patent: 6272043 (2001-08-01), Hollmer
patent: 6275414 (2001-08-01), Randolph
patent: 6282118 (2001-08-01), Lung
patent: 6291854 (2001-09-01), Peng
patent: 6297096 (2001-10-01), Boaz
patent: 6303436 (2001-10-01), Sung
patent: 6327174 (2001-12-01), Jung
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6348711 (2002-02-01), Eitan
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6392930 (2002-05-01), Jung
patent: 6417053 (2002-07-01), Kuo
patent: 6421275 (2002-07-01), Chen
patent: 6429063 (2002-08-01), Eitan
patent: 6432778 (2002-08-01), Lai
patent: 6461949 (2002-10-01), Chang
patent: 6468864 (2002-10-01), Sung
patent: 6469342 (2002-10-01), Kuo
patent: 6477084 (2002-11-01), Eitan
patent: 6486028 (2002-11-01), Chang
patent: 6487050 (2002-11-01), Liu
patent: 6498377 (2002-12-01), Lin
patent: 6514831 (2003-02-01), Liu
patent: 6531887 (2003-03-01), Sun
patent: 6545309 (2003-04-01), Kuo
patent: 6552387 (2003-04-01), Eitan
patent: 6559013 (2003-05-01), Pan
patent: 6576511 (2003-06-01), Pan
patent: 6580135 (2003-06-01), Chen
patent: 6580630 (2003-06-01), Liu
patent: 6599801 (2003-07-01), Chang et al.
patent: 6602805 (2003-08-01), Chang
patent: 6607957 (2003-08-01), Fan
patent: 6610586 (2003-08-01), Liu
patent: 6613632 (2003-09-01), Liu
patent: 6617204 (2003-09-01), Sung
patent: 6673664 (2004-01-01), Hsu
patent: 6677204 (2004-01-01), Cleeves et al.
patent: 6706598 (2004-03-01), Lai
patent: 6706599 (2004-03-01), Sadd
patent: 6806532 (2004-10-01), Kobayashi
patent: 2001/0001075 (2001-05-01), Ngo
patent: 2001/0004332 (2001-06-01), Eitan
patent: 2001/0011755 (2001-08-01), Tasaka
patent: 2002/0068403 (2002-06-01), Huang
patent: 2002/0142569 (2002-10-01), Chang
patent: 2002/0146885 (2002-10-01), Chen
patent: 2002/0151138 (2002-10-01), Liu
patent: 2002/0177275 (2002-11-01), Liu
patent: 2002/0182829 (2002-12-01), Chen
patent: 2003/0013253 (2003-01-01), Hurley
patent: 2003/0032243 (2003-02-01), Ogura
patent: 2003/0057997 (2003-03-01), Sun
patent: 2003/0067807 (2003-04-01), Lin
patent: 2003/0117861 (2003-06-01), Maayan
patent: 2003/0235075 (2003-12-01), Forbes
patent: 2004/0002182 (2004-01-01), Lai
patent: 2004/0004245 (2004-01-01), Forbes et al.
patent: 2004/0014278 (2004-01-01), Lee
patent: 84303740.9 (1985-01-01), None
patent: 90115805.5 (1991-02-01), None
patent: 01113179.4 (2002-12-01), None
patent: WO 03/017374 (2003-02-01), None
B. Eitan et al., “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device,” IEEE Electron Device Lett., vol. 22, No. 11, (Nov. 2001) pp. 556-558, Copyright 2001 IEEE.
B. Eitan et al., “Spatial Characterization of Hot Carriers Injected into the Gate Dielectric Stack of a MOFSET Based on Non-Volatile Memory Device,” date unknown, pp. 58-60.
B. Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Lett, vol. 21, No. 11, (Nov. 2000), pp. 543-545, Copyright 2000 IEEE.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, (Feb. 2002), pp. 1-8, Copyright Saifun Semiconductors Ltd. 2002.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” ISSCC 2002 Visuals Supplement, Session 6, SRAM and Non-Volatile Memories, 6.1 and 6.2, pp. 76-77, 407-408. Copyright 1990 IEEE.
M. Janai, “Data Retention, Endurance and Acceleration Factors of NROM Devices,” IEEE 41stAnnual International Reliability Physics Symposium, Dallas, TX (2003), pp. 502-505, Copyright 1989 IEEE.
S. Minami and Y. Kamigaki, “A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 107Erase/Write Cycles,” IEEE Transactions on Electron Devices, vol. 40, No. 11 (Nov. 1993) pp. 2011-2017, Copyright 1998 IEEE.
C. Pan, K. Wu, P. Freiberger, A. Chatterjee, G. Sery, “A Scaling Methodology for Oxide-Nitride-Oxide Interpoly Dielectric for EPROM Applications,” IEEE Transactions on Electron Devices, vol. 37, No. 6, (Jun. 1990), pp. 1439-1443, Copyright 1990 IEEE.
P. Manos and C. Hart, “A Self-Aligned EPROM Structure with Superior Data Retention,” IEEE Electron Device Letters, vol. 11, No. 7, (Jul. 1990) pp. 309-311, Copyright 1990 IEEE.
W. Owen and W. Tchon, “E-PROM Product Issues and Technology Trends,” IEEE 1989, pp. 17-19, Copryright 1989 IEEE.
T. Huang, F. Jong, T. Chao, H. Lin, L. Leu, K. Young, C. Lin, K. Chiu, “Improving Radiation Hardness of EEPROM/Flash Cell BY N2O Annealing,” IEEE Electron Device Letters, vol. 19, No. 7 (Jul. 1998), pp. 256-258, Copyright 1998 IEEE.
B. Eitan et al., “Electrons Retention Model for Localized Charge in Oxide-Nitride-Oxide (ONO) Dielectric,”0 IEEE Device Lett., vol. 23, No. 9, (Sep. 2002), pp. 556-558. Copyright 2002 IEEE.
T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuchiya, Y. Hayashi, “A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application,” IEEE Journal of Solid-State Circuits, vol. 26, No. 4 (Apr. 1991), pp. 497-501, Copyright 1991 IEEE.
F. Vollebregt, R. Cuppens, F. Druyts, G. Lemmen, F. Verberne, J. Solo, “A New E(E)PROM Technology With A TiSi2Control Gate,” IEEE 1989, pp. 25.8.1-25.8.4, Copyright 1989 IEEE.
B. Eitan et al., “Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of NROM Memory cells,” IEEE Transactions on Electron Devices, vol. 49, No. 11, (Nov. 2002), pp. 1939-1946, Copyright 2002 IEEE.
B. Eitan et al., “Spatial characterization of Channel hot ele
Le Thong Q.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
LandOfFree
NROM flash memory with self-aligned structural charge... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with NROM flash memory with self-aligned structural charge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NROM flash memory with self-aligned structural charge... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3859234