NROM device

Details NROM device NROM device

2006-10-10

2006-10-10

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27103

Reexamination Certificate

active

07119396

ABSTRACT:
A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6011725 (2000-01-01), Eitan
patent: 6486028 (2002-11-01), Chang et al.
patent: 6559500 (2003-05-01), Torii
patent: 6773994 (2004-08-01), Chittipeddi et al.
patent: 6853587 (2005-02-01), Forbes
patent: 2003/0235076 (2003-12-01), Forbes

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