Notch stop pulsing process for plasma processing system

Details Notch stop pulsing process for plasma processing system Notch stop pulsing process for plasma processing system

2011-07-26

2011-07-26

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C438S689000, C438S694000, C438S710000, C257S296000, C257S421000, C257S414000

Reexamination Certificate

active

07985688

ABSTRACT:
A method for etching a substrate having a silicon layer in a plasma processing chamber having a bottom electrode on which the substrate is disposed on during etching. The method includes performing a main etch step. The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved. The method further includes performing an overetch step. The overetch step including a first process step and a second process step. First process step is performed using a first bottom power level applied to bottom electrode. Second process step is performed using a second bottom power level applied to bottom electrode that is lower than first bottom power level. First process and second process steps are alternately performed a plurality of times. The method yet also includes terminating overetch step after silicon layer is etched through.

REFERENCES:
patent: 5188704 (1993-02-01), Babie et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6531349 (2003-03-01), Yoshida et al.
patent: 6899817 (2005-05-01), Becker et al.
patent: 6905626 (2005-06-01), Westerman et al.
patent: 6905737 (2005-06-01), Verplancken et al.
patent: 6905969 (2005-06-01), DeOrnellas et al.
patent: 6926844 (2005-08-01), Laermer et al.
patent: 7351664 (2008-04-01), Pandhumsoporn et al.
patent: 2001/0001743 (2001-05-01), McReynolds
patent: 2002/0052111 (2002-05-01), Paterson et al.
patent: 2003/0003748 (2003-01-01), Khan et al.
patent: 2004/0077178 (2004-04-01), Yang et al.
patent: 2005/0009358 (2005-01-01), Choi et al.
patent: 2005/0032386 (2005-02-01), Chang et al.
patent: 2005/0205862 (2005-09-01), Koemtzopoulos et al.
patent: 2005/0227378 (2005-10-01), Moise et al.
U.S. Appl. No. 11/421,000;Filed May 30, 2006; Inventors: Pandhumsoporn, et al.
International Search Report, mailed Sep. 11, 2007, for PCT Application No. PCT/US06/61705; Filed on Dec. 6, 2006; Inventors: Lam Research Corporation.
Written Opinion, mailed Sep. 11, 2007, for PCT Application No. PCT/US06/61705; Filed on Dec. 6, 2005: Lam Research Corporation.
“International Preliminary Report on Patentability”, Issued in PCT Application No. PCT/US2006/061705; Mailing Date: Jun. 26, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US2006/061705; Mailing Date: Jun. 26, 2008.
“International Preliminary Report on Patentability”, issued in PCT Application No. PCT/US2007/069910; Mailing Date: Dec. 18, 2008.
“First Office Action”, CN Application No. 200780020182.7; Mailing Date: Apr. 30, 2010.
“International Search Report,” Issued in PCT Application No. PCT/US2007/069910; Mailing Date: Jan. 24, 2008.
“Written Opinion”, Issued in PCT Application No: PCT/US2007/069910; Mailing Date: Jan. 24, 2008.
“Non Final Office Action”, U.S. Appl. No. 11/421,000, Mailing Date: Feb. 21, 2007.
“Final Office Action”, U.S. Appl. No. 11/421,000, Mailing Date: Jun. 19, 2007.

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