Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S134000, C257S256000, C257S268000, C257S270000, C257S281000, C257S286000
Reexamination Certificate
active
11000222
ABSTRACT:
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
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Merrett Joseph N.
Sankin Igor
Merchant & Gould P.C.
Raimund Christopher W.
Semisouth Laboratories, Inc.
Wojciechowicz Edward
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