Norbornene-type monomers and polymers containing pendent...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S326000, C430S905000, C430S910000, C526S257000, C526S281000, C528S040000, C549S014000, C549S273000, C549S295000, C549S320000, C549S323000

Reexamination Certificate

active

07101654

ABSTRACT:
The disclosed invention relates to novel norbornene-type monomers containing pendent lactone or sultone groups. The invention also relates to norbornene-type polymers and copolymers comprising one or more repeating units represented by the formula:and containing pendent lactone or sultone groups. These polymers and copolymers are useful in making photoimagable materials. The photoimagable materials are particularly suitable for use in photoresist compositions useful in 193 and 157 nm photolithography.

REFERENCES:
patent: 4568724 (1986-02-01), Dean
patent: 4857426 (1989-08-01), Bott et al.
patent: 5087677 (1992-02-01), Brekner et al.
patent: 5324801 (1994-06-01), Brekner et al.
patent: 5371158 (1994-12-01), Brekner et al.
patent: 5422409 (1995-06-01), Brekner et al.
patent: 5468819 (1995-11-01), Goodall et al.
patent: 5569730 (1996-10-01), Goodall et al.
patent: 5571881 (1996-11-01), Goodall et al.
patent: 5602219 (1997-02-01), Aulbach et al.
patent: 5605726 (1997-02-01), Gibbons et al.
patent: 5637400 (1997-06-01), Brekner et al.
patent: 5663308 (1997-09-01), Gibbons et al.
patent: 5698645 (1997-12-01), Weller et al.
patent: 5714304 (1998-02-01), Gibbons et al.
patent: 5733991 (1998-03-01), Rohrmann et al.
patent: 5760139 (1998-06-01), Koike et al.
patent: 5783636 (1998-07-01), Koike et al.
patent: 5881201 (1999-03-01), Khanarian et al.
patent: 5916971 (1999-06-01), Koike et al.
patent: 6057466 (2000-05-01), Starzewski et al.
patent: 6121340 (2000-09-01), Shick et al.
patent: 6136499 (2000-10-01), Goodall et al.
patent: 6166125 (2000-12-01), Sugiyama et al.
patent: 6169052 (2001-01-01), Brekner et al.
patent: 6183934 (2001-02-01), Kawamonzen
patent: 6197984 (2001-03-01), Makovetsky et al.
patent: 6214951 (2001-04-01), Brekner et al.
patent: 6232417 (2001-05-01), Rhodes et al.
patent: 6265131 (2001-07-01), Chang et al.
patent: 6284429 (2001-09-01), Kinsho et al.
patent: 6294616 (2001-09-01), Rhodes et al.
patent: 6472543 (2002-10-01), Kinsho et al.
patent: 6500961 (2002-12-01), Kinsho et al.
patent: 6538087 (2003-03-01), Zhao et al.
patent: 6660448 (2003-12-01), Tachibana et al.
patent: 2001/0026901 (2001-10-01), Maeda et al.
patent: 2002/0019545 (2002-02-01), Kinsho et al.
patent: 2002/0091215 (2002-07-01), Tachibana et al.
patent: 2003/0176583 (2003-09-01), Rhodes et al.
patent: 2005/0019638 (2005-01-01), Ravikiran et al.
patent: 0 445 755 (1991-09-01), None
patent: 96/37528 (1996-11-01), None
patent: 00/20472 (2000-04-01), None
patent: 00/24726 (2000-05-01), None
patent: 00/34344 (2000-06-01), None
Uetani et al.; “Positive ArF resist with 2eAdMA/GBLMA resin system”; SPIE Conference on Advance Resist Technology and Processing XVI, 1999; SPIE vol. 3678; pp. 510-513.
Nozaki et al.; “New Protective Groups in Alicyclic Methacrylate Polymers for 193-nm Resists”;Journal of Photopolymer Science and Technology; vol. 10, No. 4; 1997; pp. 545-550.
Chan et al.; “New Chiral Sultam Auxiliaries: Preparation and Their Application in Asymmetric Diels-Alder Reactions”; Tetrahedron: Asymmetry; vol. 8, No. 15; pp. 2501-2404; 1997.
Brodsky et al.; “157 nm Resist Materials: Progress Report”;J. Vac. Sci. Technol. B 18(6); Noc./Dec. 2000; pp. 3396-3401.
Hung et al.; “Resist Materials for 157 nm Microlithography: An Update”; Proceedings of the SPIE,vol. 4345; Conference held in Santa Clara, CA Feb. 2001.
Chiba et al.; “157 nm Resist Materials: A Progress Report”;Journal of Photopolymer Science and Technology; vol. 13. No. 4; 2000; pp. 657-664.
Patterson et al.; “Polymers for 157 nm Photoresist Applications: A Progress Report”; Proc. of SPIE; vol. 3999, Advances in Resist Technology and Processing XVII, 2000.
Hung et al.; “Synthesis of Alicyclic Polymers for 157 nm Photoresists by PD2+Catalyzed Vinyl Addition Polymerization”; California Institute of Technology, Posted Mar. 14, 2003.
International Search Report, Application No. PCT/US2005/000730, mailed Jun. 21, 2005.
Lee et al.; “Novel Alicyclic Polymers Having 7,7-Dimethyloxepan-2-one Acid Labile Groups for ArF Lithography”; Proceedings of the SPIE—The International Society for Optical Engineering; vol. 4690, No. 1, Mar. 2002; pp. 110-119.
International Search Report, Application No. PCT/US2005/000730, mailed Oct. 6, 2005.
Written Opinion of the International Searching Authority; Application No. PCT/US2005/000730, mailed Nov. 7, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Norbornene-type monomers and polymers containing pendent... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Norbornene-type monomers and polymers containing pendent..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Norbornene-type monomers and polymers containing pendent... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3619881

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.