NOR-type ROM with LDD cells and process of fabrication

Details NOR-type ROM with LDD cells and process of fabrication NOR-type ROM with LDD cells and process of fabrication

1996-12-23

1998-08-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257392, 257336, 257344, H01L 218246, H01L 27112, H01L 2978

Patent

active

057930864

ABSTRACT:
ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.

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