NOR flash memory and method of manufacturing the same

Details NOR flash memory and method of manufacturing the same NOR flash memory and method of manufacturing the same

2011-07-12

2011-07-12

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S322000, C257SE27103

Reexamination Certificate

active

07977731

ABSTRACT:
A NOR flash memory has a plurality of memory cell transistors, wherein each memory cell transistor shares the source diffusion layer with another memory cell transistor adjacent thereto on one side thereof in the column direction and shares the drain diffusion layer with another memory cell transistor adjacent thereto on the other side thereof in the column direction, and the width of the source diffusion layer in the column direction is narrower than the width of the drain diffusion layer in the column direction.

REFERENCES:
patent: 5190887 (1993-03-01), Tang et al.
patent: 5907781 (1999-05-01), Chen et al.
patent: 2006/0234448 (2006-10-01), Yonehama et al.
patent: 2006/0258108 (2006-11-01), Hironaka et al.
patent: 2007/0164341 (2007-07-01), Sakagami
patent: 2002-508589 (2002-03-01), None
patent: 2006-303009 (2006-11-01), None

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