Nor flash memory and erase method thereof

Details Nor flash memory and erase method thereof Nor flash memory and erase method thereof

2006-11-20

2008-08-26

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240, C365S200000

Reexamination Certificate

active

07417895

ABSTRACT:
A NOR flash memory includes a plurality of main cells, a plurality of main word lines, a plurality of dummy cells, and a plurality of dummy word lines. The main cells are electrically connected to a bit line and are arranged in a pattern. The main word lines are each electrically connected to a respective one of the main word lines. The dummy cells are electrically connected to the bit line and located adjacent to outermost ones of the main cells. The dummy word lines are each electrically connected to a respective one of the dummy cells. At least some of the dummy word lines form a first group that is supplied with a first erase voltage and at least some other ones of the dummy word lines form a second group that is supplied with a second erase voltage that is different from the first erase voltage.

REFERENCES:
patent: 6828637 (2004-12-01), Kim et al.
patent: 6987696 (2006-01-01), Wang et al.
patent: 2003/0198101 (2003-10-01), Pio
patent: 2004/0113199 (2004-06-01), Hazama et al.
patent: 2005/0041477 (2005-02-01), Lee et al.
patent: 2001-210100 (2001-08-01), None
patent: 2004-127346 (2004-04-01), None
patent: 2005-063650 (2005-03-01), None
patent: 1020050021616 (2005-03-01), None
Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 2006-07902; dated Nov. 15, 2006.
English Translation of Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 2006-07902; dated Nov. 15, 2006.

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