Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-05
2009-10-06
Rose, Kiesha L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257SE29129, C257SE29300, C257SE21179, C438S201000, C438S211000
Reexamination Certificate
active
07598561
ABSTRACT:
Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with each of the pairs of cells having first and second conductors adjacent to the bit line diffusions, floating gates beside the first and second conductors, an erase gate between the floating gates, and a source line diffusion in the substrate beneath the erase gate, and at least one additional conductor capacitively coupled to the floating gates. In some disclosed embodiments, the conductors adjacent to the bit line diffusions are word lines, and the additional conductors consist of either a pair of coupling gates which are coupled to respective ones of the floating gates or a single coupling gate which is coupled to both of the floating gates. In another embodiment, the conductors adjacent to the bit line diffusions are program lines, and the third conductors are word lines which extend in a direction perpendicular to the program lines and the diffusions.
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Chen Bomy
Fan Der-Tsyr
Tuntasood Prateep
Rose Kiesha L.
Silicon Storage Technolgy, Inc.
Wright Edward S.
Wright Tucker
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