Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-07-08
2008-07-08
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S163000, C365S100000
Reexamination Certificate
active
07397688
ABSTRACT:
Provided are a nonvolatile variable resistor with a structure capable of suppressing an increase in resistance in a case where scaling is applied to reduce a projected area on a plane, a memory device using the nonvolatile variable resistor, and a scaling method of a nonvolatile variable resistor. A first electrode and a second electrode formed on a substrate face each other in a direction of a surface of the substrate. The first electrode is used as an inner electrode, a nonvolatile variable resistance body is formed on an outer surface of the first electrode and the second electrode is formed as an outer electrode on an outer surface of the nonvolatile variable resistance body.
REFERENCES:
patent: 4479106 (1984-10-01), Shimizu et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6104055 (2000-08-01), Watanabe
patent: 6144286 (2000-11-01), Moos et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6434815 (2002-08-01), Onishi et al.
patent: 6693821 (2004-02-01), Hsu et al.
patent: 6762481 (2004-07-01), Liu et al.
patent: 6891749 (2005-05-01), Campbell et al.
patent: 2003/0025587 (2003-02-01), Whitney et al.
patent: 2004/0096699 (2004-05-01), Doerr et al.
patent: 1999-0077881 (1999-10-01), None
patent: 00/57498 (2000-09-01), None
Korean Office Action mailed Sep. 23, 2005 in corresponding Korean application No. 10-2003-007516.
Patent Abstract of Japan, 11-266043, Sep. 28, 1999.
European Search Report mailed Dec. 5, 2005 in corresponding EP application No. 03025694.5-2203.
Patent Abstracts of Japan, vol. 014, No. 553 (E-1010), Dec. 7, 1990 & JP 02 238659 a (Seiko Epson Corp.), Sep. 20, 1990.
Liu et al, “Electric-Pulse-Induced Reversible Resistance Change Effect in Magnetoresistive Films”, Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
Hao et al, “Electronic Transport and Magnetic Properties in (La1-xGdx)0.67Ca0.33MnO∂Perovskites” Materials Science and Engineering B83 (2001), pp. 70-73.
Lam David
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
LandOfFree
Nonvolatile variable resistor, memory device, and scaling... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile variable resistor, memory device, and scaling..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile variable resistor, memory device, and scaling... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2803064