Nonvolatile static random access memory cell

Details Nonvolatile static random access memory cell Nonvolatile static random access memory cell

1981-11-19

1984-07-17

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365185, 307279, G11C 1140

Patent

active

044609787

ABSTRACT:
A nonvolatile static random access memory cell (10) includes a pair of cross-coupled transistors (12, 14) which function as a bistable circuit to store data states. Variable threshold transistors (36, 41) are respectively connected in series between the driver transistors (12, 14) and load devices (48, 50). A control node (40) is driven to a high voltage state to cause one of the variable threshold transistors (36, 41) to be driven to have a higher threshold voltage and thereby store the data state held in the cross-coupled transistors (12, 14). The data state is thus stored in nonvolatile form. Upon recall the memory cell (10) is reactivated and the threshold differential between the variable threshold transistors (36, 41) causes the driver transistors (12, 14) to be set at the stored data state. The data recalled by the memory cell (10) is in true rather than in complementary form. The variable threshold transistors (36, 41) are reset by driving the power terminal V.sub.cc to a high voltage state to reestablish common threshold voltages for the variable threshold voltage transistors (36, 41).

REFERENCES:
patent: 4044343 (1977-08-01), Uchida
patent: 4103185 (1978-07-01), Denes
patent: 4122541 (1978-10-01), Uchida
patent: 4132904 (1979-01-01), Harari
patent: 4207615 (1980-06-01), Mar

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