Nonvolatile SRAM cells and cell arrays

Details Nonvolatile SRAM cells and cell arrays Nonvolatile SRAM cells and cell arrays

1996-08-22

1998-09-22

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

36518507, 36518508, 365 94, 365104, 365154, G11C 1600

Patent

active

058124500

ABSTRACT:
A memory cell (400) for storing data on an integrated circuit. The memory cell (400) is static, nonvolatile, and reprogrammable. The layout of the memory cell is compact. In a first state, the logic output from this memory cell (400) is at about voltage level at a first conductor (505); and in a second state, the logic output is at about a voltage level at a second conductor (510). The memory cell (400) of the present invention includes a first programmable memory element (515) and a second programmable memory element (520). First programmable memory element (515) is coupled between the first conductor (505) and a sensing node (405). Second programmable memory element (520) is coupled between the sensing node (405) and the second conductor (510). In the first state, first programmable memory element (515) is not programmed, while the second programmable memory element (520) is programmed. In the second state, first programmable memory element (515) is programmed, while second programmable memory element (520) is not programmed.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4546454 (1985-10-01), Gupta et al.
patent: 4596938 (1986-06-01), Cartwright, Jr.
patent: 4609986 (1986-09-01), Hartmann et al.
patent: 4617479 (1986-10-01), Hartmann et al.
patent: 4628487 (1986-12-01), Smayling
patent: 4651303 (1987-03-01), Dias et al.
patent: 4652773 (1987-03-01), Cartwright, Jr.
patent: 4677318 (1987-06-01), Veenstra et al.
patent: 4713792 (1987-12-01), Hartmann et al.
patent: 4829203 (1989-05-01), Ashmore, Jr.
patent: 4871930 (1989-10-01), Wong et al.
patent: 4885719 (1989-12-01), Brahmbhatt
patent: 4899067 (1990-02-01), So et al.
patent: 4912342 (1990-03-01), Wong et al.
patent: 4924119 (1990-05-01), Lee
patent: 4935648 (1990-06-01), Radjy et al.
patent: 4979146 (1990-12-01), Yokoyama et al.
patent: 5005155 (1991-04-01), Radjy et al.
patent: 5016217 (1991-05-01), Brahmbhatt
patent: 5021693 (1991-06-01), Shima
patent: 5028810 (1991-07-01), Castro et al.
patent: 5043941 (1991-08-01), Sakamoto
patent: 5043946 (1991-08-01), Yamauchi et al.
patent: 5053996 (1991-10-01), Slemmer
patent: 5097449 (1992-03-01), Cuevas
patent: 5121006 (1992-06-01), Pedersen et al.
patent: 5140552 (1992-08-01), Yamauchi et al.
patent: 5170373 (1992-12-01), Doyle et al.
patent: 5181188 (1993-01-01), Yamauchi et al.
patent: 5200652 (1993-04-01), Lee
patent: 5241224 (1993-08-01), Pedersen et al.
patent: 5247478 (1993-09-01), Gupta et al.
patent: 5260610 (1993-11-01), Pedersen et al.
patent: 5260611 (1993-11-01), Cliff et al.
patent: 5262986 (1993-11-01), Yamauchi et al.
patent: 5272368 (1993-12-01), Turner et al.
patent: 5283759 (1994-02-01), Smith
patent: 5339271 (1994-08-01), Tanagawa
patent: 5350954 (1994-09-01), Patel et al.
patent: 5353248 (1994-10-01), Gupta
patent: 5438295 (1995-08-01), Reddy et al.
patent: 5440246 (1995-08-01), Murray et al.
patent: 5457653 (1995-10-01), Lipp
patent: 5602776 (1997-02-01), Herdt et al.
patent: B14617479 (1993-09-01), Hartmann et al.

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