Nonvolatile semiconductor storage device with ferroelectric capa

Details Nonvolatile semiconductor storage device with ferroelectric capa Nonvolatile semiconductor storage device with ferroelectric capa

1992-11-06

1994-04-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257390, 257324, 365145, H01L 2978

Patent

active

053007999

ABSTRACT:
In an element forming region isolated from other regions by a field oxide, one select transistor and a plurality of MOS transistors are connected in series so that a source/drain diffusion region is commonly owned by two neighboring transistors. The gate electrodes of the MOS transistors are connected to the lower electrodes of ferroelectric capacitors, respectively. The gate electrode of the select transistor, and the lower electrodes and upper electrodes of the ferroelectric capacitors are led out as word lines. A metal wiring which serves as a bit line is connected to a drain diffusion region.

REFERENCES:
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5155573 (1992-10-01), Abe et al.

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