Nonvolatile semiconductor storage device with charge storage...

Details Nonvolatile semiconductor storage device with charge storage... Nonvolatile semiconductor storage device with charge storage...

2011-08-16

2011-08-16

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29309

Reexamination Certificate

active

07999306

ABSTRACT:
A nonvolatile semiconductor storage device includes a semiconductor substrate, a charge storage layer formed above the semiconductor substrate, a control gate formed above the charge storage layer, a silicide layer formed above the control gate, a word gate formed above a side of the control gate. A top surface of the silicide layer is flat.

REFERENCES:
patent: 6531732 (2003-03-01), Sugita et al.
patent: 7005349 (2006-02-01), Lee et al.
patent: 7709874 (2010-05-01), Okazaki et al.
patent: 2004/0197995 (2004-10-01), Lee et al.
patent: 2006/0086953 (2006-04-01), Lee et al.
patent: 2007/0272970 (2007-11-01), Lee
patent: 2010/0025753 (2010-02-01), Terai
patent: 2004-312009 (2004-11-01), None

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