Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-29
2006-08-29
Luu, Chuong Anh (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000, C257S314000, C257S617000, C257S368000
Reexamination Certificate
active
07098504
ABSTRACT:
There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.
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Kawashima Noriyuki
Taira Kenichi
Luu Chuong Anh
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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