Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-05
1998-08-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, H01L 2976, H01L 29788
Patent
active
057930813
ABSTRACT:
A nonvolatile semiconductor storage device in which a composite gate of a floating gate memory cell transistor and a gate electrode of a peripheral MOS transistor are formed in the same lithography process and a manufacturing method thereof. A polycrystalline silicon film and an ONO film are formed on a well region through a gate oxide film and a tunnel oxide film. A polycrystalline silicon film is formed after removing the ONO film in the right region. A floating gate and a control gate of the memory cell transistor and a gate electrode of the select transistor are formed with photoresist as a mask. Thereafter, ions of impurities are implanted and diffused in a transverse direction, thereby to form an impurity diffused layer. With this, since the impurity diffused layer is formed by transverse diffusion of impurities after the tunnel oxide film is formed, it is possible to prevent deterioration of the film quality of the tunnel oxide film.
REFERENCES:
patent: 4870615 (1989-09-01), Marnyama et al.
patent: 5284786 (1994-02-01), Sethi
patent: 5326999 (1994-07-01), Kim et al.
patent: 5359218 (1994-10-01), Taneda
patent: 5432740 (1995-07-01), D'arrigo et al.
patent: 5439838 (1995-08-01), Yang
Sato Yasuo
Tomioka Yugo
Ngo Ngan V.
Nippon Steel Corporation
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