Nonvolatile semiconductor storage device and method for...

Details Nonvolatile semiconductor storage device and method for... Nonvolatile semiconductor storage device and method for...

2009-06-02

2010-12-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27078, C257SE21179

Reexamination Certificate

active

07851849

ABSTRACT:
A nonvolatile semiconductor storage device includes: a plurality of stacked units juxtaposed on a major surface of a substrate, each stacked unit aligning in a first direction parallel to the major surface of the substrate; and a gate electrode aligning parallel to the major surface in a second direction non-parallel to the first direction. Each of the plurality of stacked units includes a plurality of stacked semiconductor layers via an insulating layer. The plurality of stacked units are juxtaposed so that the spacings between adjacent stacked units are alternately a first spacing and a second spacing larger than the first spacing. The second spacing is provided at a periodic interval four times a size of a half pitch F of the bit line. The gate electrode includes a protruding portion that enters into a gap of the second spacing between the stacked units. A first insulating film, a charge storage layer, and a second insulating film are provided between a side face of the semiconductor layer and the protruding portion.

REFERENCES:
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patent: 2007/0252201 (2007-11-01), Kito et al.
patent: 2008/0023747 (2008-01-01), Park et al.
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patent: 2009/0011570 (2009-01-01), Mizushima et al.
patent: 2007-266143 (2007-10-01), None

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