Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-07-12
2011-07-12
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189090, C365S189011
Reexamination Certificate
active
07978495
ABSTRACT:
A nonvolatile semiconductor memory device for suppressing a current consumption caused by a transient current because of the potential change of the bit and word lines at the time of shifting between the programming, reading, and erasing actions in a highly integrated memory cell array is provided. A memory cell (1) array comprises two-terminal memory cells each having a variable resistance element whose resistance value reversibly changes by pulse application are arranged in a row and column directions, wherein the memory cells in a row are connected at one end to common word lines (WL1to WLn), the memory cells in a column are connected at the other end to common bit lines (BL1to BLm), and a common unselected voltage VWE/2 is applied to both unselected word and bit lines not connected to the selected memory cell during the reading, programming, and erasing actions for the selected memory cell.
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Kawazoe Hidechika
Tamai Yukio
Ho Hoai V
Nixon & Vanderhye P.C.
Radke Jay
Sharp Kabushiki Kaisha
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