Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-13
2009-02-10
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07489006
ABSTRACT:
A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.
REFERENCES:
patent: 5498560 (1996-03-01), Sharma et al.
patent: 5644152 (1997-07-01), Rostoker et al.
patent: 5869858 (1999-02-01), Ozawa et al.
patent: 6365459 (2002-04-01), Leu
patent: 6441430 (2002-08-01), Tanigami
patent: 6555434 (2003-04-01), Koh
patent: 6624464 (2003-09-01), Shin et al.
patent: 7189618 (2007-03-01), Lee
patent: 2005/0127451 (2005-06-01), Tsuchiya et al.
patent: 2002-270705 (2002-09-01), None
Patent Office Notification of Argument Submission issued by the Korean Patent Office on Apr. 23, 2007, for Korean Patent Application No. 10-2006-26458, and English-language translation.
Takeuchi, et al., “A Self-Aligned STI Process Integration for Low Cost and Highly Reliable 1Gbit Flash Memories”, Symposium on VLSI Technology Digest of Technical Papers, pp. 102-103, (1998).
Ichige, et al., “A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND Flash EEPROMs”, Symposium on VLSI Technology Digest of Technical Papers, pp. 89-90, (2003).
Hieda, et al., “Semiconductor Device and Method of Manufacture Thereof”, U.S. Appl. No. 11/064,453, filed Feb. 24, 2005.
Notification of the First Office Action issued by the Chinese Patent Office on Mar. 7, 2008, for Chinese Patent Application No. 200610068044.3, and English-language translation thereof.
Hagishima Daisuke
Kinoshita Atsuhiro
Takashima Akira
Watanabe Hiroshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Lee Calvin
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