Nonvolatile semiconductor storage device and data writing...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S163000, C365S175000, C365S189080, C365S189160

Reexamination Certificate

active

07907436

ABSTRACT:
A nonvolatile semiconductor storage device includes: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire up to a standby voltage larger than a reference voltage prior to a set operation for programming only a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying a program voltage necessary for programming of the selected variable resistor based on the reference voltage to the selected first wire and applying a control voltage which prevents the rectifying device from turning ON based on the program voltage to the non-selected second wire.

REFERENCES:
patent: 7307268 (2007-12-01), Scheuerlein
patent: 7800935 (2010-09-01), Maejima et al.
patent: 2005/0146955 (2005-07-01), Kajiyama
patent: 2008/0175032 (2008-07-01), Tanaka et al.
patent: 2010/0027308 (2010-02-01), Maejima
patent: 2010/0027317 (2010-02-01), Maejima
patent: 2010/0054017 (2010-03-01), Maejima
patent: 2010/0097832 (2010-04-01), Mukai et al.
patent: 2010/0103714 (2010-04-01), Maejima

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