Nonvolatile semiconductor storage apparatus and method of...

Details Nonvolatile semiconductor storage apparatus and method of... Nonvolatile semiconductor storage apparatus and method of...

2006-01-24

2006-01-24

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257S318000, C365S185010, C365S185050, C365S185110

Reexamination Certificate

active

06989564

ABSTRACT:
A NOR type semiconductor storage comprising memory cells, word lines, local and main source lines of metal and bit lines is disclosed. Two adjacent cells on a column form one set and share the drain region. Two adjacent cell sets on a column share the source region. Cell columns are isolated by trench type element isolation regions. A local source line run on and is connected to the source regions of the cells on a row. The main source lines are arranged intermittently between the bit line columns and are connected to the local source lines. A height of embedded layers in the element isolation regions under the local source lines or a height of a portion of the embedded layers contacting the substrate is lower than an upper surface of the source regions under the local source lines. The local source lines are connected to the well region.

REFERENCES:
patent: 6577533 (2003-06-01), Sakui et al.
patent: 2000-269467 (2000-09-01), None

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