Nonvolatile semiconductor storage apparatus and data...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S175000, C365S051000

Reexamination Certificate

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07936586

ABSTRACT:
The semiconductor storage apparatus includes a memory cell array including memory cells each having a rectifying element and a variable resistive element connected in series, the memory cells being arranged in crossing portions of a plurality of first wires and a plurality of second wires, and a control circuit configured to control charging to the first wire. The control circuit charges the first wire connected to a selected memory cell up to a first potential, and then set the first wire in a floating state. Then it charges another first wire adjacent to the first wire connected to the selected memory cell to a second potential. The potential of the first wire connected to the selected memory cell is thereby caused to rise to a third potential by coupling.

REFERENCES:
patent: 6005802 (1999-12-01), Takeuchi et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 7755922 (2010-07-01), Taguchi
patent: 2008/0049511 (2008-02-01), Crippa et al.
U.S. Appl. No. 12/876,746, filed Sep. 7, 2010.

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