Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S059000, C257S296000, C257S060000, C257S325000
Reexamination Certificate
active
06906390
ABSTRACT:
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS1made of silicon nitride or silicon oxynitride and a second nitride film CS2made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS1.The first nitride film CS1is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS2is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.
REFERENCES:
patent: 58-54674 (1983-03-01), None
patent: 60-60770 (1985-04-01), None
patent: 63-205965 (1988-08-01), None
patent: 5-343694 (1993-12-01), None
patent: 6-296029 (1994-10-01), None
patent: 9-153492 (1997-06-01), None
Charge Injection and Retention Characteristic of MNOS Structure With Double SiN Layer; Tashong Kim and Kazunori Ohnishi; Denishi Johno Tsushin Gekkai Ronbunishi C-II, vol. J74-C-11, No. 8, pp. 662-664.
Aozasa Hiroshi
Fujiwara Ichiro
Nomoto Kazumasa
Tanaka Shinji
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Wojciechowicz Edward
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