Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-25
2006-04-25
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S310000, C257S324000
Reexamination Certificate
active
07034355
ABSTRACT:
To achieve a higher operating speed, higher reliability, and lower power consumption by reducing the thickness of an inter-poly silicon insulator film between a floating gate and a control gate of a flash memory, a silicon dioxide film, a silicon nitride film, tantalum pentoxide, and a silicon dioxide film are formed in a multilayer structure to serve as the inter-poly insulator film between a floating gate and a control gate. With this configuration, tantalum pentoxide formed on the silicon nitride film has a dielectric constant of 50 or more, which is higher than that of the silicon dioxide film, and the thickness of the inter-poly silicon insulator film can be reduced.
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Le Thao P.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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