Static information storage and retrieval – Floating gate – Multiple values
Patent
1999-04-12
2000-05-23
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Multiple values
36518509, G11C 1600
Patent
active
06067248&
ABSTRACT:
A nonvolatile memory having a memory field and a redundant field within a single semiconductor chip is disclosed. The memory field is provided to store normal data and the redundant field is provided to store essential device data. The nonvolatile memory includes a plurality of first page buffers performing a multi-bit reading operation for the memory field and a plurality of second page buffers performing a regular single-bit operation for the redundant field. A time period of the regular single-bit operation for the redundant field is shorter than that of the multi-bit operation for the memory field. The nonvolatile semiconductor memory of the invention is therefore capable of performing single-bit operation at a higher speed than the conventional nonvolatile semiconductor memories each having the single- and multi-bit operation modes, improving their performance.
REFERENCES:
patent: 5671178 (1997-09-01), Park et al.
patent: 5838610 (1998-11-01), Hashimoto
patent: 5966326 (1999-10-01), Park et al.
patent: 5982663 (1999-11-01), Park
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
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