Nonvolatile semiconductor memory with resistance elements...

Details Nonvolatile semiconductor memory with resistance elements... Nonvolatile semiconductor memory with resistance elements...

2007-09-06

2010-02-16

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S332000, C257S401000, C257S510000, C257S536000

Reexamination Certificate

active

07663178

ABSTRACT:
A nonvolatile semiconductor memory of an aspect of the present invention comprises a memory cell transistor and a resistance element arranged on a semiconductor substrate. The memory cell transistor includes a floating gate electrode constituted of a first conductive material arranged on a gate insulating film on a surface of the semiconductor substrate, an inter-gate insulating film arranged on the floating gate electrode, a control gate electrode arranged on the inter-gate insulating film, and a source/drain diffusion layer provided in the semiconductor substrate. The resistance element includes an element isolation insulating layer arranged in the semiconductor substrate and including a depression, and a resistor constituted of a second conductive material filling up the depression. An impurity concentration of the second conductive material is lower than that of the first conductive material.

REFERENCES:
patent: 6346736 (2002-02-01), Ukeda et al.
patent: 7242049 (2007-07-01), Forbes et al.
patent: 7358135 (2008-04-01), Park
patent: 2005/0127400 (2005-06-01), Yeo et al.
patent: 2006/0281244 (2006-12-01), Ichige et al.
patent: 9-92736 (1997-04-01), None
U.S. Appl. No. 11/853,544, filed Sep. 11, 2007, Arai, et al.

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