Nonvolatile semiconductor memory with raised source and drain

Details Nonvolatile semiconductor memory with raised source and drain Nonvolatile semiconductor memory with raised source and drain

1994-01-21

1995-01-10

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257382, 257754, H01L 2978

Patent

active

053810287

ABSTRACT:
The MOS field-effect transistor has a semiconductor substrate of a first conductivity type, a pair of first polycrystalline silicon layers of a second conductivity type different from the first conductivity type which are formed on the semiconductor substrate and separated from each other by a small gap, a pair of diffusion layers of the second conductivity type formed in those regions of the semiconductor substrate which are in contact with the pair of first polycrystalline silicon layers, respectively, a gate insulating film formed to cover the pair of first polycrystalline silicon layers of the second conductivity type and a part of the semiconductor substrate exposed to an outside at the small gap, and a gate electrode formed on the gate insulating film. The nonvolatile semiconductor memory device is arranged by using the MOS field-effect transistor mentioned above.

REFERENCES:
patent: 5045901 (1991-09-01), Komori et al.
patent: 5175118 (1992-12-01), Yoneda
patent: 5270232 (1993-12-01), Kimura
16M EPROM Cell Technology, Nikkei Micro Devices, Jan. 1990, pp. 101-107.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory with raised source and drain does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory with raised source and drain, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory with raised source and drain will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-852984