Nonvolatile semiconductor memory with erase gate and its...

Details Nonvolatile semiconductor memory with erase gate and its... Nonvolatile semiconductor memory with erase gate and its...

2008-12-19

2011-11-15

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257SE29129, C257SE29300

Reexamination Certificate

active

08058680

ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate, a select gate formed above the semiconductor substrate, a floating gate formed above the semiconductor substrate and an erase gate positioned lower than an upper surface of the floating gate, and opposite an edge of a lower surface of the floating gate.

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patent: 2001-230330 (2001-08-01), None

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