Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-08-30
2009-10-20
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185200, C365S185260
Reexamination Certificate
active
07606073
ABSTRACT:
A nonvolatile semiconductor memory according to the present invention includes a memory cell transistor which is disposed in a first region and which has a gate electrode of a stacked structure, and a dummy cell which is disposed in a second region neighboring the first region and which has a gate electrode having the same structure as that of the gate electrode of the memory cell transistor. The memory cell transistor and dummy cell are connected to the same word line. The memory cell transistor has a diffusion layer serving as the source/drain region thereof, while the dummy cell does not have the diffusion layer serving as the source/drain region thereof.
REFERENCES:
patent: 6853028 (2005-02-01), Kim et al.
patent: 7158419 (2007-01-01), Lee et al.
patent: 7167393 (2007-01-01), Oikawa et al.
patent: 7195967 (2007-03-01), Sasago et al.
patent: 7333367 (2008-02-01), Lee et al.
patent: 2004/0041202 (2004-03-01), Kim et al.
patent: 2006/0278917 (2006-12-01), Forbes et al.
patent: 04-230077 (1992-08-01), None
patent: 2001-167592 (2001-06-01), None
patent: 2003-179169 (2003-06-01), None
patent: 2004-342261 (2004-12-01), None
patent: 2006-005006 (2006-01-01), None
Japanese Office Action dated Apr. 14, 2009 corresponding to U.S. Appl. No. 11/847,498 filed on Aug. 30, 2007.
Ishibashi Shigeru
Noguchi Mitsuhiro
Auduong Gene N.
Kabushiki Kaisha Toshiba
Turocy & Watson LLP
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