Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-05-10
2005-05-10
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular connection
C365S189120
Reexamination Certificate
active
06891754
ABSTRACT:
The invention provides a method of programming in a nonvolatile semiconductor memory device, having a plurality of memory cell strings connected to a plurality of bitlines and constructed of a plurality of memory cell transistors whose gates are coupled to a plurality of wordlines, and a plurality of registers corresponding to the bitlines. The method involves applying a first voltage to a first one of the bitlines and applying a second voltage to a second one of the bitline, the first bitline being adjacent to the second bitline, the first and second voltages being supplied from the registers; electrically isolating the first and second bitlines from their corresponding registers; charging the first bitline up to a third voltage higher than the first voltage and lower than the second voltage; and applying a fourth voltage to a wordline after cutting off current paths into the first and second bitlines.
REFERENCES:
patent: 5677873 (1997-10-01), Choi et al.
patent: 5768188 (1998-06-01), Park et al.
patent: 5768215 (1998-06-01), Kwon et al.
patent: 5862074 (1999-01-01), Park
patent: 5966326 (1999-10-01), Park et al.
patent: 5982663 (1999-11-01), Park
patent: 5991202 (1999-11-01), Derhacobian et al.
patent: 6282121 (2001-08-01), Cho et al.
patent: 6285587 (2001-09-01), Kwon
patent: 6288936 (2001-09-01), Kawamura
patent: 6353555 (2002-03-01), Jeong
Jeong Jae-Yong
Lee Sung-Soo
Le Thong Q.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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