Nonvolatile semiconductor memory utilizing a ferroelectric film

Details Nonvolatile semiconductor memory utilizing a ferroelectric film Nonvolatile semiconductor memory utilizing a ferroelectric film

1992-11-06

1994-04-12

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 257295, G11C 1122

Patent

active

053031822

ABSTRACT:
Two memory cells are formed adjacent each other on a semiconductor substrate. In each memory cell, eight MOS transistors are formed between two selection transistors such that the MOS transistors and the selection transistors are connected in series, and that a source/drain diffusion layer is shared by adjacent ones of the selection transistors and the MOS transistors. A drain layer is shared by two adjacent selection transistors of the two memory cells. Ferroelectric capacitors are formed on the respective MOS transistors. A common electrode serves both as a gate electrode of the MOS transistor and a bottom electrode of the ferroelectric capacitor. Gate electrodes of the selection transistors, the common electrodes, and top electrodes of the ferroelectric capacitors are connected to word lines, and the above drain diffusion layer is connected to a bit line.

REFERENCES:
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5189594 (1993-02-01), Hoshiba
patent: 5216572 (1993-06-01), Larson et al.
patent: 5227855 (1993-07-01), Momose
"A Nonvolatile Memory FET Using Ferroelectric Thin Film PbtIO.sub.3 ", Yasushi Matsui et al., Technical Study Reports of the Institute of Electronics and Communication Engineers, vol. 78, No. 179, pp. 1-8, 1978.

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